| 主题: ST手机应用的创新的存储器解决方案 |
| 在线问答: |
| [主持人：ChinaECNet] |
各位听众（网友），上午好！欢迎参加中电网在线座谈。今天，我们有幸邀请到ST公司的专家就“ST手机应用的创新的存储器解决方案”举行在线座谈。在座谈中，您可就您关心的问题与ST公司的专家在线进行直接、实时的对话交流。中电网衷心希望通过大家的共同努力，不仅能够增进各位听众（网友）对“ST手机应用的创新的存储器解决方案”的了解和掌握，而且能够为大家事业的发展带来裨益。 |
[2006-5-17 10:10:16] |
| [主持人：ChinaECNet] |
我们已经进入问答阶段如果听众想重温演讲或内容可以点击下面“回顾演示”重看演讲。 |
[2006-5-17 10:19:06] |
| [问：wuxinjiang] |
请问意法半导体公司NOR闪存目前已经应用于哪些手机厂商？ |
| [答：Benny] |
意法目前的产品已经广泛应用于世界前１０位的手机厂商，在中国前５位的手机厂商都有与ＳＴ 合作 |
[2006-5-17 10:23:39] |
| [主持人：ChinaECNet] |
在此回答问题的专家是ST公司的：Benny Dou、Bonny zhang、James Zhu、Kevin
Zhu、Champion Tao和Gavin YIN。 |
[2006-5-17 10:26:04] |
| [问：andypclau] |
Please compare the price and performance (power,
speed) of NOR and NAND MCP. |
| [答：Benny] |
NOR Flash will be applied in program adn Nand will applied in Data storage
.
For ST ,>1Gbit we have Nand Flash solution <=512Mbit
,we have NOR Flash solution |
[2006-5-17 10:26:06] |
| [问：fzhuo] |
NOR闪存和NAND闪存在结构和价格上有何差别?NOR和NAND闪存主要用在那种领域? |
| [答：Gavin] |
NOR和NAND 在组成存储单元的结构不同。NAND要比NOR具有更高的容量/价格比。
NOR主要用于存储代码。
NAND主要用于存储数据。 |
[2006-5-17 10:26:23] |
| [问：cmqpostee] |
我想问问 ST FLASH中一个BANK和两个BANK的区别 |
| [答：Benny] |
两个ＢＡＮＫ结构允许对ＦＬＡＳＨ同时进行读与写操作，因为对同一个ＢＡＮＫ，一次只能进行读或写操作 |
[2006-5-17 10:28:33] |
| [问：fzhuo] |
1Gb NOR闪存大约的价位是多少?何时能提供样品? |
| [答：Benny] |
计划明年Ｑ１进行样品，价格会依据市场需求 |
[2006-5-17 10:29:51] |
| [问：zw168] |
请解释PSRAM的结构和性能特点.它和SRAM有何不同和优点? |
| [答：Gavin] |
PSRAM采用了DRAM的core，内部自行进行刷新来保持数据的有效性，PSRAM采用SRAM的接口。
这样，对用户来说接口是一样的。
PSRAM在功耗上要比SRAM大一些，读取速度上稍微慢一些（现在已经几乎一样了。）
另外，PSARM在上电顺序上有要求（见datasheet），而SRAM没有。 |
[2006-5-17 10:32:17] |
| [问：andy123456] |
请问ST 的 NOR FLASH 跟其他品牌比较 最大的优势在哪里？ |
| [答：Benny] |
ＳＴ目前占市场手机份额，超过25%，并且与本土广泛采用的MTK,PHILIPS,INFINION, QUALCOMM,SKYWORKS
，ＴＩ等平台都有深层合作 |
[2006-5-17 10:32:23] |
| [问：elp02yd] |
请问65nm flash何时年产 |
| [答：Benny] |
预计在明年一季度 |
[2006-5-17 10:33:52] |
| [问：elmer] |
想问个简单问题，什么是NOR和NAND MEMORIES？ |
| [答：Gavin] |
NOR和NAND 是两种不同的FLASH工艺，NOR主要在8Mb－－512Mb之间，用于存储代码和数据。主要的厂商有：
INTEL, ST, SPANSION.
NAND 主要在128Mb－－16Mb之间，用于存储数据。价格便宜。主要的
厂商有SAMSUNG, ST, HYNIX |
[2006-5-17 10:35:35] |
| [问：hanker_chen] |
What kind of memory configurations are fit
for 3G basic phone,feature phone and smart phone applications respectively,
thanks! |
| [答：Benny] |
我们提供ＮＯＲ５１２Ｍbit+128/64Mbit MCP ,现在广泛应用于现有的３Ｇ或明或2.5G方案 |
[2006-5-17 10:35:43] |
| [问：charlicheng] |
90nm NOR闪存能达到133MHz的速度,65nm NOR闪存的速度预计能达到多高?此外,还有什么优点? |
| [答：Benny] |
６５nm会达到目的１６６ＭＨＺ， 写入速度达到1000ＫＢ／Ｓ，全面1.8V方案 |
[2006-5-17 10:38:29] |
| [问：hanker_chen] |
Which is more cost competitive between MLC
and SLC？ |
| [答：Benny] |
MLC product cost will be lower about 30% VS SLC.
as MLC means 2b/c ,enlarge flash capacity without increasing die size.thanks |
[2006-5-17 10:39:51] |
| [问：druidmu] |
请问专家, NOR+SDRAM组合和NOR+PSRAM的组合在性能和价格上有何特色?有无可能前者要替代后者? |
| [答：Benny] |
两种组合的选取，在目前看来，更决定于，手机平台提供商是否支持ＳＤＲＡＭ，当然在价格上ＮＯＲ＋ＳＤＲＡＭ的组合会更有竞争力一些，谢谢 |
[2006-5-17 10:42:07] |
| [问：chen903wei] |
ST的NOR闪存采取了那些措施来保证手机数据的安全性和保密性? |
| [答：Gavin] |
手记数据的安全性和保密性依赖于FLASH本身和文件系统的健壮性。
ST NOR 采用了以下措施：
1。block保护包括软件保护和硬件保护
2。OTP区域，一次性编程。
3。64bit的全球唯一识别码 |
[2006-5-17 10:43:54] |
| [问：charlicheng] |
有迹象表明,手机的闪存正在从NOR过度到NAND,ST对此有何看法和对策? |
| [答：James] |
ST has forecasted and detected the trend that NAND demand is up, and
NOR demand is down in the application of mobile phone.
But, it takes time for the migration because of baseband. Now, only few
baseband suppliers can provide with NAND boot, such as Broadcom, Freescale,
MTK etc.
So, ST now will continue to support high desity NOR MCP, meanwhile, NAND
MCP is in the development. |
[2006-5-17 10:44:13] |
| [问：andypclau] |
costing and performance (speed, capacity,
power) comparison between NOR and NAND MCP |
| [答：Champion] |
NOR Read/write speed:
Initial/random access:~70/85/90ns
Sequential access: ~14ns (burst mode), 20/25ns (page mode)
program:10us / word ,Can be access word by word.
buffer program: 340us/32word
For NAND read/write speed:
Initial/random access:~12us
Sequential access:~50ns
program:200us / 512byte, Only access by page
For Capacity:
NOR, 16Mbit~1Gbit
NAND, 128Mbit/256Mbit/512Mbit for small page NAND and 1Gbit/2Gbit/4Gbit
for large page NAND
For power comsumption:
NOR operating current for read/program: about 15~20mA/10mA(typ.)
NAND operating current for read/program:8~10mA(typ.)
Overall,NOR with high read speed for XIP,NAND with high speed programing
throughtput. |
[2006-5-17 10:44:38] |
| [问：ttmm] |
据传,ST和Intel针对手机存储子系统，制定了NOR闪存规范,请问这是否带有排它性?能否成为NOR的行业规范? |
| [答：Benny] |
ＳＴ和ＩＮＴＥＬ合作制订的规范，已占全球市场５０％份额，是最大限度的合作规范，且均采用９０nm技术，是目前最先进，也最流行的规范，谢谢 |
[2006-5-17 10:46:08] |
| [主持人：ChinaECNet] |
各位观众，现在用户提问很踊跃，专家正在逐一回答。请耐心等待您问题的答案，同一问题请不要多次提交。 |
[2006-5-17 10:46:55] |
| [问：tannianbo] |
请问专家,为了满足手机对SMS,MMS,和图像传送等要求,根据你们的经验,手机的存储器要满足要求,至少需要几种类型的存储器?每种容量有多大? |
| [答：James] |
1. Entry level mobile phone
32+8M, NOR+PSRAM
2. 2/2.5G middle level mobile phone
128+32/256+64M, NOR+PSRAM
3. 2.5G/3G high end moible phone
128+32M NOR+PSRAM, plus 512/1G NAND |
[2006-5-17 10:48:13] |
| [问：wangdangwi] |
is st flash compatible with amd
flash and intel strataflash both in pin_list and command set? |
| [答：Benny] |
ST "s product is compatibile with intel from Software and hardware,account
for 50% share worldwide. however, spansion does not compatibile with us,both
SW and HW. |
[2006-5-17 10:48:18] |
| [问：andypclau] |
As NOR can be used for program and data, why
to use NOR MCP rather than NOR standalone chip in mobile application? |
| [答：Benny] |
To select NOR MCP is to save the room for PCB board and easier to design
and purchasing from market.thanks |
[2006-5-17 10:50:15] |
| [问：dafei] |
LPSDRAM和PSRAM,两者有何不同?同样容量的价格如何? |
| [答：James] |
The main diffence is interface.
LPSDRAM is DRAM interface.
PSRAM is SRAM interface. |
[2006-5-17 10:50:58] |
| [问：johnren] |
另外所谓的在布线时数据和地址总线可一等效交换的原则是什么？ |
| [答：Gavin] |
NOR数据，地址总线是分开的，需要注意的是flash的数据宽度和cpu数据宽的的匹配。 |
[2006-5-17 10:51:10] |
| [问：zw168] |
请问在手机上流畅地播放视频图像,所需的存储器至少有多大?它和处理器的处理速度有关吗? |
| [答：Champion] |
For vedio play, you can use NOR burst read mode for high data throughtput.
For ST 90nm NOR flash, its Burst Mode Frequency:108/133 MHz and its write
throughput with 700KB/sec.
It largely depends on Baseband"s processing speed capbility.
For memory density, 256Mbit/512Mbit and even 1Gbit NOR is ok for this
type data stream. |
[2006-5-17 10:53:23] |
| [问：daicm] |
据称3G手机的存储器配置与电脑一样,那如何解决存储器的功耗问题? |
| [答：Gavin] |
3G手机的存储是以NOR/NAND flash为基础的，这是非常适合手持设备的解决方案。低功耗是其设计的首要目标之一。
而电脑的目标是性能而不是功耗，所以采用dram和disk的方式。两者是不同的。 |
[2006-5-17 10:53:37] |
| [问：yangss2006] |
那么请问，你们的创新在哪里？ |
| [答：Benny] |
ＳＴ的创新在于成功的开发ＭＬＣ技术以及先进的生产技术，并且同时拥有ＮＯＲ与ＮＡＮＤ方案为手机客户最大限度的提供选择的空间与方案 |
[2006-5-17 10:55:35] |
| [问：frogfeng] |
NOR闪存和NAND闪存各有优点,ST有无计划把这两者集成在一起? |
| [答：Benny] |
目前正在做市场计划中，在未来ＳＴ很有可能会将俩者结合在一起．谢谢 |
[2006-5-17 10:58:17] |
| [问：chen903wei] |
ST的NOR闪存,除了在手机上应用,还用在什么地方? |
| [答：James] |
Set Top Box, TV, ADSL, Printer, Industry, Bluetooth, PC BIOS, Basestation,
etc. |
[2006-5-17 10:58:22] |
| [问：daicm] |
ST的存储器是否支持3G的三个标准(TD-SCDMA、WCDMA与UMTS)? |
| [答：James] |
Yes. ST memory( NOR MCP and NAND MCP ) can be used for TD-SCDMA, WCDMA
handsets. |
[2006-5-17 11:00:51] |
| [问：zw168] |
请介绍MCP和POP有什么不同?那种较为先进? |
| [答：Champion] |
For MCP: NOR+SRAM/PSRAM, NAND+LPSDRAM, (2 dies or 3 dies), 3+ dies are
not optimal.
For POP: Package-on-Package, memory+logic,industory moving in this direction,most
cost-effective and compromising solution. |
[2006-5-17 11:01:09] |
| [问：ttmm] |
多媒体手机的存储器采用的是FALSH?还是EEPROM的存储器?是串行口?还是并行口的数据传输? |
| [答：Gavin] |
手机采用是FLASH，因为FLASH和EEPROM相比有更高的容量/价格比。EEPROM使用于参数存储，因为每bit的价格比较高。
flash是并行的数据传输，标准的三总线结构（Contrl bus，data bus，address bus）。 |
[2006-5-17 11:01:52] |
| [问：foxyfox] |
请问专家,您对三星的OneNAND存储器有何评价?能替代NOR吗? |
| [答：Benny] |
三星的OneNAND存储器会是比较创新的产品，但个人观点认为由于产品推出时间短，市场成熟度不够，大多数的手机客户不愿承担风险且没有兼容性选择，加上三星本身也是手机制造商，所以并不能威胁到ＮＯＲ
ＦＬＡＳＨ的市场 |
[2006-5-17 11:04:03] |
| [问：zhangwq] |
ST M29W160的价位能有下降空间吗? |
| [答：James] |
What is the current price you have gotten?
What is your targeted price?
What is application? |
[2006-5-17 11:04:34] |
| [问：foxyfox] |
3G手机有许多新功能如多媒体MMS,高清相机,相册,流视频,MPEG-4视频,MP3和音频以及3D游戏,Java应用和Web浏览等,NOR闪存已不够用,如果选用NAND闪存,这有何区别?要注意什么问题? |
| [答：Gavin] |
对!NAND 越来越多的用于这些领域，因为NAND的容量比NOR大很多，（现在最高32Gb）。
价格也更便宜。NAND 的接口和NOR不同，NAND有坏块，需要的软件支持比NOR复杂。
您可以下载ST 的NAND flash的datasheet了解更多信息。 |
[2006-5-17 11:04:53] |
| [问：druidmu] |
ST有无手机闪存卡?容量有多大? |
| [答：Benny] |
ＳＴ在闪存卡上只有限的进行推广，非常抱歉 |
[2006-5-17 11:06:27] |
| [问：johnren] |
存储器中的BANK是如何定义的 |
| [答：Champion] |
For NOR flash, several blocks groups as a bank. Its size depends on
different memory type/density. Of course, it also has the concept of parameter
bank and main bank. For example, 8Mbit Bank or 16Mbit Bank,ect.
For Due Bank flash, read-while-write due bank operation can performed. |
[2006-5-17 11:07:00] |
| [问：narrator] |
手机芯片成本中闪存约占多大的比例? |
| [答：Benny] |
目前平均的比例大约６％－９％，谢谢 |
[2006-5-17 11:08:32] |
| [问：cmqpostee] |
FLASH驱动对于客户来说！有难度没有？是你们提供相应的驱动？还是客户自己编写？ |
| [答：Champion] |
It"s easy for customer to develop Flash driver. Of course, ST can provide
this. Customer can reuse it for their own purpose. |
[2006-5-17 11:08:55] |
| [问：fsqiu] |
请详细介绍ST的加密NOR闪存(Krypto)的主要性能如DES以及价格等. |
| [答：Gavin] |
krypto主要用于STB领域。
krypto提供了：
1。读保护
2。非易失性保护
3。CPU 和flash相互鉴权。
des算法是一个标准的加密，解密算法，有些CPU有硬件做这个工作。具体算法可以参考相应的算法介绍。 |
[2006-5-17 11:10:57] |
| [问：foxyfox] |
3G手机中有多种存储器,存储器接口应该如何实现?有解决方案吗? |
| [答：Champion] |
For the memory used in 3G Mobile, NAND+LPSDRAM, NOR+LPSDRAM....
ST this type memory has been qualified by many 3G mobile phone flatform.
We ST already has such slotion. |
[2006-5-17 11:12:35] |
| [问：ttmm] |
请问专家,NOR什么样时候会有统一的标准? |
| [答：Benny] |
目前的标准主流，已经可以分为，ＳＴ＆INTEL（５０％share) 和SPANSION 和其他,所以已经比较简单明了．谢谢 |
[2006-5-17 11:14:08] |
| [问：foxyfox] |
手机存储器的发展趋势是低功耗和高密度,ST在这两方面有和独到之处?相应的产品是什么? |
| [答：James] |
512Mb NOR + 128Mb PSRAM is good solution to balance low power consumption
and high desity solution. |
[2006-5-17 11:14:59] |
| [主持人：ChinaECNet] |
各位观众，现在用户提问很踊跃，专家正在逐一回答。请耐心等待您问题的答案，同一问题请不要多次提交。 |
[2006-5-17 11:16:28] |
| [问：dafei] |
目前ST的NAND闪存最大容量能做到多大?在市场上的竞争力如何? |
| [答：James] |
4Gb NAND has been mass production, which is competitive in some segments. |
[2006-5-17 11:17:44] |
| [问：narrator] |
请问手机电视中采用那种存储器?容量应该有多大? |
| [答：James] |
1Gb NAND + 256Mb LPSDRAM. |
[2006-5-17 11:18:34] |
| [问：tannianbo] |
ST的NOR和NAND闪存读/写速率有多快? |
| [答：Gavin] |
读：
NOR--70ns，90ns
NAND--25us
写：
NOR--5us/byte
NAND--0.5us/byte |
[2006-5-17 11:18:52] |
| [问：mfkd3335] |
能告诉我现在市场上的手机,哪个牌子的哪种型号的用的ST的方案吗? |
| [答：Benny] |
ST的FLASH的目前广泛用于NOKIA,MOTO,LG,SAMSUNG 等国际厂家，国内包括ＢＩＲＤ，ＨＡＩＥＲ，在内的客户都在进行广泛合作 |
[2006-5-17 11:23:43] |
| [问：zxjha] |
请问：正常工作功耗有多大？ |
| [答：Gavin] |
nor和nand工作是电流大约100mA。
待机状态下大约为：100uA |
[2006-5-17 11:25:05] |
| [问：hanker_chen] |
What"s the marketing trends for NOR FLASH
and NAND FLASH?betwwen tat |
| [答：Benny] |
NOR Flash still will account for 92% share in Mobile phone application,
NAND Flash will will embeded also together with CARD solution to enlarge
storage for multimedia ,camera etc.
thanks |
[2006-5-17 11:27:20] |
| [问：elmer] |
在家电上是否有应用？主要用途是什么？ |
| [答：James] |
NOR Flash can be used for Digital TV, Set Top Box need, high end IP
phone, ADSL modem, etc. |
[2006-5-17 11:28:20] |
| [问：fsqiu] |
ST在手机SIM卡上有何种产品?价格如何? |
| [答：Benny] |
很抱歉，您的问题我会保留，请ＳＴ专门负责ＳＭＡＲＴＣＡＲＤ部门同事进行回答 |
[2006-5-17 11:30:21] |
| [问：jx882003] |
请问，手机应用时可能遇到的实时信息存储，在多媒体手机中是如何解决的？ |
| [答：Champion] |
Real-time storage is very important to multimedia mobile phone. Video
download using NOR : Multibank flashj can use due bank operation for high
speed throughput and No delay between read and write operations. |
[2006-5-17 11:34:25] |
| [问：crazycake] |
我想问问你们的90nm的NorFLASH，它的价格在市场有没有竞争力。因为如果价格上比.13的相差太多，也许短期内很少有人回去冒险。 |
| [答：Benny] |
谢谢您的建议，目前国内已经有多家客户选用了我们90nm的产品，在成本上已经有相当的优势． |
[2006-5-17 11:38:27] |
| [问：hanker_chen] |
NOR+LPSDRAM主要用在什么应用上？ |
| [答：Benny] |
目前主要应用于手机应用上 |
[2006-5-17 11:38:54] |
| [主持人：ChinaECNet] |
所有问题均已提交给ST公司的专家。座谈期间未回答的问题，ST公司专家也会逐一回答，并在中电网上公布，请大家注意收看。 |
[2006-5-17 11:42:12] |
| [问：fzhuo] |
ST提供NAND闪存吗?如果有,能举出些型号吗? |
| [答：Kevin] |
40454: ST提供NAND闪存吗?如果有,能举出些型号吗?
Yes,we offer NAND Flash to market:
desity from 128Mb to 8Gb now.
For Package , we can offer TSOP and BGA type.
Part number ,just name a few as follows:
128Mb TSOP: NAND128W3A2BN6E
256Mb TSOP: NAND256W3A2BN6E
512Mb TSOP: NAND512W3A2BN6E
1Gb TSOP: NAND01GW3B2AN6E
Others like 2Gb/4Gb/8Gb ... |
[2006-5-17 11:43:14] |
| [问：mahatma] |
为什么ST的NOR和NAND闪存读/写速率差别会这么大呢?
读: NOR 70ns NAND 25ns
写: NOR 5us/byte NAND 0.5us/byte
理论上来说, NAND写时间应该大于读时间的 |
| [答：Champion] |
Maybe you misunderstand what I said just now.
NAND Read speed,
Initial/random access: 12us(page read)
Sequential access: 50ns.
NOR Read speed,
Initial/random access: ~70/85/90ns.
Sequential access: ~14ns (burst mode), 20/25ns (page mode). |
[2006-5-17 11:43:59] |
| [问：zhangwq] |
我们的ATA产品使用M29W160,价位高,能否告知在那申请到好的价位? |
| [答：James] |
Where you bought ST M29W160? |
[2006-5-17 11:45:26] |
| [问：fsqiu] |
ST的NAND闪 存+LPSDRAM MCP有那些型号?容量和价格如何? |
| [答：Kevin] |
We have plan for NAND+LPSDRAM: density ranging from 256Mb+256Mb,512Mb+256Mb,512Mb+512Mb,1Gb+512Mb,2Gb+512Mb.
For detailed product status and price information ,please contact our
local sales office. |
[2006-5-17 11:46:14] |
| [问：wliush] |
LPSDRAM是什么存储器? |
| [答：Benny] |
LOW POWER SDRAM |
[2006-5-17 11:47:29] |
| [主持人：ChinaECNet] |
由于时间关系，本次中电网“在线座谈”马上就要结束了。虽然各位听众（网友）已与ST公司的专家讨论了许多问题，但是还有许多提问没有来得及进行交流。本次在线座谈结束后，中电网将请ST公司的专家继续答复所有的来自各位听众（网友）的提问，然后整理上载到中电网网站上，以便大家查阅。 |
[2006-5-17 11:47:44] |
| [主持人：ChinaECNet] |
在此，中电网特别感谢给予本次中电网在线座谈巨大支持的ST公司，特别感谢专门在线回答各位听众（网友）提问的ST公司的各位专家们，特别感谢各位听众（网友）积极热情的参与。 |
[2006-5-17 11:48:02] |
| [问：mahatma] |
好象SAMSUNG现在已经宣布量产49nM的NAND了,ST腿出65nM具有什么样的有力竞争优势? |
| [答：Kevin] |
Thanks for your information.
ST has a aggressive shrink plan on NAND,from 90,70nm,to 65nm and 50nm
in roadmap. This will help to allow higher density and cost effectiveness
to our customers. |
[2006-5-17 11:51:11] |
| [主持人：ChinaECNet] |
祝大家事业有成、生活愉快！欢迎多提宝贵意见，欢迎关注中电网，下次再见。 |
[2006-5-17 11:55:02] |
| [问：chpeng81] |
3G手机需要移动存储如多媒体卡,SD卡等,请问ST在这方面能提供什么样的产品?能详细介绍一下吗? |
| [答：Kevin] |
Thanks for your question.
To serve SD card market for mobile phone,currently we mainly offer NAND
chips to Flash card customers/partners.
For SD card itself,as we are independent semiconductor supplier,we are
not offering SD card to mass market with ST brand. |
[2006-5-17 11:57:20] |
| [问：frogfeng] |
支持3G手机应用处理器的存储器主要有那几种类型?ST提供那些?有型号吗? |
| [答：Kevin] |
Our NAND+LPSDRAM is one of the key memory offer for 3G application,currently
density from 256Mb+256Mb to 1Gb+512Mb, while 2Gb+512Mb and 4Gb+512Mb are
in our roadmap as well.
Please contact our local Sales office for more information. |
[2006-5-17 12:00:41] |
| [问：hanker_chen] |
目前手机存储器是制约手机成本的一个重要因素,而音乐手机需要大容量的存储系统做支撑,ST有这样的产品吗?价格如何? |
| [答：Kevin] |
NAND Flash and Card(SD/MMC/TFlash...) are popular solution for data
storage system in mobile.
we are offering NAND Flash for mobile application,and music phone is one
of the key targets.
For mobile phone,we can provide NAND density from 256Mb to 2Gb, in both
TSOP and BGA package. |
[2006-5-17 12:04:56] |
| [问：mahatma] |
ST的NAND闪存可擦写多少次?
在无坏区的情况下 |
| [答：Kevin] |
100,000times for erase and program |
[2006-5-17 12:09:47] |
| [问：charlicheng] |
LPSDRAM和PSRAM,两者有何不同?同样容量的价格如何? |
| [答：Kevin] |
they have different core, LPSDRAM has higher density than PSRAM and
higher power consumption.
price is lower than psram |
[2006-5-17 12:10:59] |
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