在线座谈

热门关键字: 智能卡 比特 HMI H.264 

关于本次座谈

座谈简介

本次在线座谈将介绍瑞萨的可用于笔记本电脑和移动应用的Li+Ion电池的 P Channel 和 N Channel MOSFETs , 包括用于手机充电器的TO-92M MOSFET,同时还将介绍它们的特性及封装的详细信息。

精彩问答

主题:瑞萨用于电池充电器的功率MOSFETs
在线问答:
[问:jams2607] 请问作电池的充电器是主要要注意哪些方面 以及,充电时使恒压好还是恒流好 谢谢 
[答:Wonky] Depend on your IC application  [2004-12-15 10:29:19]
[问:gy.zy] 瑞萨的MOSFET最大功率多大?能否用单片机I/O(如MOTOROLA的HC08、PIC单片机)直接驱动? 
[答:Dennis] Power range is wide. Can be controlled driver or directly by MCU.  [2004-12-15 10:31:55]
[问:chenco511] Renesas 有75V,75A用在ebike上的MOSFET吗 
[答:Wonky] Yes ,we have TO-220AB package for this application  [2004-12-15 10:33:01]
[问:panjianghong] 请问:在同步整流中,同步整流MOSFET的寄生二极管导通时间与MOSFET开通时间怎么确定? 
[答:Wonky] Current through body diode at the begining, later through MOSFET.  [2004-12-15 10:35:42]
[问:jacey] 如何选用PDA与手机中的充电MOSFETS? 
[答:Dennis] PDA is comparatively lower than mobile phone in charger power. Mosfets should be a SMD type and small current(less than 1A), for both appliactions  [2004-12-15 10:37:13]
[问:szhedong] 目前瑞萨用在电源管理的mosfet的开关速度是多少? 
[答:Wonky] very quickly as very lower Qgd  [2004-12-15 10:38:31]
[问:lotusyan] 请问瑞萨的充电器与linear的充电器比,有什么不同和特点  
[答:Jacky] We"re a semiconductors company.  [2004-12-15 10:39:02]
[问:zhengzhongjian] 请问:器件的瞬间最大功率是多少?正常工作温度最高时多少? 
[答:Dennis] Max instant power is depending on which mosfet. Normally max opr temp is 125 deg C  [2004-12-15 10:40:22]
[问:adam79416] 在集成功率MOSFET时一般采取何种结构的管子?大部分文献资料均采用了PMOSFET作为功率管,能否用NMOSFET作为功率管呢?在输出电流较大时,NMOSFET显然更有优势,那为什么绝大部分的电源管理芯片却采用PMOSFET作为功率管?除了考虑击穿和输出电流外还应该考虑哪些因素? 
[答:Wonky] use PMOSFET or NMOSFET depend on your IC application.  [2004-12-15 10:41:41]
[问:virginliu0915] 请问瑞萨用于电池充电器的功率MOSFETs的优势在哪里?! 
[答:Dennis] super low Rds(on), low Qg & Qgd, low thermal resistance, various spec range for selection, and also the competitive price in market  [2004-12-15 10:42:47]
[问:zjcxzj] D8-L系列是否有耐压不高的问题? 
[答:Wonky] No problem within our Spec."s application  [2004-12-15 10:43:39]
[问:ecnan jing_EBY7E] 在快速充电是,功率器件的散热问题,直接影响产品的可靠性。请问瑞萨的场效应管的温升情况如何? 
[答:Dennis] Our new generation package types, LFPAK or WPAK, can solve this problem.  For example, LFPAK thermal resistance of LFPAK is 3 deg C, as comparing to that of the traditional SOP8 50 degC.  [2004-12-15 10:45:24]
[问:meteor_chu] 用在适配器或充电器中的MOSFET是否都需要带隔离变压器的?不用变压器的行吗? 
[答:Wonky] Depend on your IC & safety consideration.  [2004-12-15 10:45:35]
[问:yangb_jl] 请问:器件的工作频率多高? 
[答:Wonky] No problem for 1M application.  [2004-12-15 10:48:07]
[问:meteor_chu] 目前Renesas的MOSFET的导通电阻能做到最低的是多少? 
[答:Dennis] 2.1 mohms at 10V Vgs  [2004-12-15 10:49:43]
[问:riello] Renesas的MOSFET,那些器件适合正激或反激使用?或两者都适合? 
[答:Dennis] suitable for both type designs  [2004-12-15 10:52:30]
[问:richard_h] 演讲中只提到低功率产品的运用,有没有用在高功率产品上?比如:SPS POWER 500W,960W? 
[答:Jacky] Renesas do have high-power MOSFETs...you can go to our website for more info: www.renesas.com.  [2004-12-15 10:53:38]
[问:netflu] 瑞萨的MOSFET提供spice模型吗?在哪儿可以找到? 
[答:Dennis] Yes, Renesas have such models.  You can get it from Renesas websites or request us directly by e-mail  [2004-12-15 10:54:57]
[问:maeleton1] 在电池充电器中,好像大多使用P-MOSFET,N-MOSFET和P-MOSFET有何不同的属性? 
[答:Wonky] They are different construction.  [2004-12-15 10:55:04]
[问:richard ben] 请问renesas用于手机充电器的mosfet RJK6022有没有配套的driver ic 
[答:Jacky] Not requested specified 配套 driver IC. You can choose devices based on the circuit design.  [2004-12-15 10:55:42]
[问:maeleton1] DC/DC转换中,导致MOSFET的损耗有那几部分?那种损耗是主要的? 
[答:Dennis] conduction loss and switching loss. switching loss is the main one  [2004-12-15 10:57:17]
[问:rocky1] 请问你们是怎样考虑电池内阻对效率和寿命等因素的影响? 
[答:Wonky] The lower Rds,the better for efficiency & the temperature will more lower.  [2004-12-15 10:59:33]
[问:jeffrey_hz] MOSFET的泄漏电流有多少?  
[答:Wonky] Our MOSFET"s performance is very good, no need worry about the leak current.  [2004-12-15 11:01:14]
[问:riello] 高边和低边MOSFET除了电压不同外,还要注意什么问题?如何选择? 
[答:Wonky] High side need more lower switching loss & low side need more lower Rdson.  [2004-12-15 11:03:32]
[问:astroares] 请问1A的DC/DC应该选用什么型号的Renesas的MOSFET 
[答:Dennis] usually using 2A mosfet. For which mosfet, pls check our mosfet line up in the presentation or catalog.  [2004-12-15 11:03:45]
[问:zzkeng] 用在适配器或充电器中的MOSFET是否都需要带隔离变压器的?不用变压器的行吗? 
[答:Wonky] If you need transformer depend on your IC& safety consideration,no problem for MOSFET.  [2004-12-15 11:06:26]
[问:kllyj2008] 如何降低开关电源中所产生的尖峰电压对MOSFET的损坏?  
[答:Dennis] reducing it by control IC or other components  [2004-12-15 11:07:15]
[问:DirectCG] DC/DC转换器中所用的MOSFET和锂离子充电器所用的MOSFET有何差别? 
[答:Wonky] They are same,just depend on your application while select them.  [2004-12-15 11:08:22]
[问:Jasonzhou168] 同步整流MOSFET将会被应用到台式电脑上吗? 
[答:Dennis] yes. already used in desktop PC!  [2004-12-15 11:09:48]
[问:mountds] 我想用MOSFET 制作一个分压器用于显示器的亮度控制,其VDS=DC200V , Id max=5mA , 瑞萨的MOSFET 哪个型号可选? 
[答:Wonky] which package do you need?  [2004-12-15 11:11:23]
[问:dudu001] 请问:   用于笔记本的P-Channel电池和N-Channel电池的功率有多大?这两款外部性能有什么区别?   谢谢! 
[答:Dennis] charger poewer of about 150W to 200W. no difference in package outline. Note: Commonly-use package of SOP8, or by Renesas LFPAK or WPAK for more high efficiency / end models  [2004-12-15 11:15:09]
[问:ecnan jing_EBY7E] Trr,Ciss,Qg是影响管子开关速度的重要参数,请问瑞萨的器件有何优势? 
[答:Dennis] In new Renesas mosfet Qg is very low, and Ciss is also reasonable low as well  [2004-12-15 11:17:27]
[问:riello] Renesas的功率MOSFET的封装有那几种?从性能和成本上说,那种最佳? 
[答:Jacky] There"re LFPAK, WPAK, SO-8, TO-220, etc.. For charger applications, we promote LFPAK (such as HAT2167H, HAT2168H) for high-performance, and promote SO-8 (such as HAT2195R, HAT2198R) for cost-competitive design. In addition, RJK6022DJE (package is TO-92M) for mobile phone charger.  [2004-12-15 11:17:31]
[问:zxp1963] 1、瑞萨用于电池充电器的功率MOSFETs的功率与输入电压关系,对于220V交流输入电压,最大输出功率是多少? 2、在互联网上能否找到中文开发资料? 
[答:Wonky] Depend on your detail circuit & application. For chinese version material,pls contact our office.  [2004-12-15 11:17:51]
[问:mountds] I NEED A MOSFET WHICH VGS IS 0~5V , VDS IS ABOUT 200VDC Id LESS THAN 5mA , COULD YOU PLS ADVISE WHICH TYPE COULD MEET MY REQUIREMENT ? THKS 
[答:Wonky] which package do you need?  [2004-12-15 11:19:16]
[问:chenco511] Renesas  是否可以提供 M37512+M61048的DEMO BOARD 
[答:Dennis] Probably O.K.  Pls contact our sales office for more details  [2004-12-15 11:21:01]
[问:encaon] MOSFET的漏极电流Id和最大充电电流间应有多大的富余量? 
[答:Wonky] Depend on your application,for example,heatsink.  [2004-12-15 11:21:08]
[问:dreamb] 请问你们有没有SO8的改进版的MOSFET比如Philips的LFPAK 
[答:Jacky] We have LFPAK, WPAK which are advancing SO8.  [2004-12-15 11:21:40]
[问:chenco511] 对于Li电池电动车,RENESAS对于充电电路方面有适合的产品吗 
[答:Dennis] Yes. Renesas have products for such use.  Pls contact our engineer for more information  [2004-12-15 11:22:33]
[问:maeleton1] Renesas的MOSFET的EMI性能和噪音特性如何?抗干扰能力如何?是否要作特别处理? 
[答:Wonky] Our MOSFET"s performance is very good, Don"t worry about them.  [2004-12-15 11:22:37]
[问:zyn37] 瑞萨用于电池充电器的功率MOSFETs 请介绍主要型号,制造特点、可靠性抗烧毁情况。谢谢! 
[答:Dennis] pls specify which kind of battery charger?  for what use?  [2004-12-15 11:23:25]
[问:ecnan jing_EBY7E] 请问镍氢电池和锂电池充电用的MOSTEF有何区别? 
[答:Dennis] no any difference  [2004-12-15 11:24:18]
[问:chunsen] 使用中MOSFET容易烧毁,最重要的要注意什么? 
[答:Wonky] Within MOSFET"s Spec.while application.  [2004-12-15 11:24:30]
[问:zzkeng] 目前Renesas的MOSFET的导通电阻能做到最低的是多少? 
[答:Dennis] 2.1 mohms at 10V Vgs  [2004-12-15 11:27:57]
[问:virginliu0915] P沟道LFPAK封装VDS范围最大是多少? 
[答:Wonky] Now LFPAK PMOSFET Vds is 30V.  [2004-12-15 11:27:57]
[问:meteor_chu] Renesas的MOSFET有没有带温度传感器的? 
[答:Wonky] Some special MOSFET have.  [2004-12-15 11:29:23]
[问:David Lee] most of Li battery use Vgss=+/-20v Pch MOS , but Renesas"s PCH Vgss =-20v/+10v Is it OK for Li battery design?  
[答:Dennis] Absolutely O.K.  [2004-12-15 11:30:06]
[问:yingkelly] 我想问下瑞萨公司有没有耐高压的器件? 
[答:Wonky] Yes,Max Vdss is 1500v.  [2004-12-15 11:30:47]
[问:wwmwl] 功率MOSFETs性能主要在于MOSFETs的结构,TO-92M MOSFETs是否在结构上有所突破?如果有,可不可以介绍一下? 谢谢! 
[答:Dennis] Yes. Renesas have such technology. By chip mofification.  [2004-12-15 11:32:24]
[问:ecnan jing_EBY7E] 用IR2110配MOSFET作电机控制(直流12V/300W),选用瑞萨的什么型号最好? 
[答:Wonky] You can select TO-3P package series for high current application.   [2004-12-15 11:33:14]
[问:corea] what"s the structure of the device, VMOS or LDMOS, or .....new? 
[答:Dennis] Renesas does not have these kind of mosfets.  For more detailed information, pls consult the related suppliers.  [2004-12-15 11:40:20]
[问:luogongqiang] Renesas的MOSFET在充电器中的效率能达到多高?它的损耗有多高? 
[答:Wonky] Very high efficiency as very lower Rdson , Qgd, ...etc.  [2004-12-15 11:40:25]
[问:luogongqiang] 能否详细介绍Renesas的MOSFET的热特性和保护性能?不加散热器的最大耗散功能目前能达到多高? 
[答:Wonky] Our LFPAK & WPAK have very lower thermal resistance.  [2004-12-15 11:42:54]
[问:xianxiazai] 你们提供设计方案?芯片供货周期多长? 
[答:Jacky] Depands....Normally leadtime is around 6-12 weeks; but under shortage, leadtime might be longer.  [2004-12-15 11:43:44]
[问:encaon] DC/DC转换器中所用的MOSFET和锂离子充电器所用的MOSFET有何差别? 
[答:Wonky] They are same,just depend on your application while select them.  [2004-12-15 11:44:06]
[问:meteor_chu] Renesas的MOSFET是否有带PWM控制器的? 
[答:Dennis] Sorry we don"t have such now.  In near future, RENESAS have plan to develop it  [2004-12-15 11:44:47]
[问:DirectCG] 在解决提高功率的同时,又要把各种噪声压制到最小。贵公司有什么好的可操作的方法? 
[答:Wonky] Use good performance MOSFET,such as LFPAK, It can work in high frequency ,however very low noise.  [2004-12-15 11:46:12]
[问:virginliu0915] 请问LFPAK封装比SOP-8封装便宜吗? 
[答:Jacky] No. LFPAK is expensive than SO-8.  [2004-12-15 11:47:48]
[问:zhngjnpng911] 要增加输出功率,能否把MOSFET并联使用?如何选择这两种MOSFET?驱动时有何要注意的地方?  
[答:Wonky] Yes,of course.  [2004-12-15 11:48:00]
[问:wrilcb] 如何选用NOTBOOK中充电MOSFETS? 
[答:Dennis] LFPAK, WPAK or SOP8 package; 20V / 30V; 10A to 20A (usually using p-ch mosfets)  [2004-12-15 11:48:45]
[问:mountds] I need a MOSFET VGS=0~5V Vdss=DC200~ Id=0~5mA , small package such so-8 sot23 ,to-92 are acceptable ,pls advise which one ?  
[答:Wonky] Depend on your circuit design.  [2004-12-15 11:49:29]
[问:luo gongqiang] Renesas的MOSFET的工作频率能达到多高? 
[答:Wonky] No problem for 1M frequency application.  [2004-12-15 11:50:06]
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[问:yingkelly] 请问瑞萨公司的功率MOSFET最高耐压有多大? 
[答:Wonky] Max Vdss is 1500v.  [2004-12-15 11:50:50]
[问:smallwind] 目前低压大电流功率MOSFET采用TRENCH MOSFET的方式多不多?TRENCH MOSFET设计制造需要注意哪几点? 
[答:Dennis] Nowaday ususlly adopts the trench mosfets. No difference in circuit designing.  [2004-12-15 11:51:12]
[问:xuezg] 贵公司产品与fairchildsemi同类产品相比有何优点与缺点? 
[答:Dennis] Renesas stronger and higher performance, in terms of Rds(on), Qg /Qgd, thermal res, package compatibility and types , and new wide range product line up  [2004-12-15 11:53:46]
[问:ecnanjing_EBY7E] 同样功率输出时,MOSFET与双极晶体管比较各有何特点? 
[答:Wonky] Basically,MOSFET is more suitable for switching power supply.  [2004-12-15 11:56:26]
[问:forwardyu] 1,是哪一种封装? 2,如何计算温升,计算出的值与实际值相比,一般会有多大偏差。 3,如何根据规格书的Id选定所需的管子,Id derating 一般是怎样? 4,renesas的MOSFET相比竞争对手的Rdson 和Qin Qrr等有何优势?或者说renesas MOSFET的优势是怎样体现出来的? 
[答:Dennis] 1. which mosfet 2. no much discrepancy 3. Id down as temp rising 4. Renesas higher Rds(on) and lower Qg/Qgd. Higher efficiency can be realised  [2004-12-15 12:00:17]
[问:rainstar04] 我在做一个太阳能电池板给蓄电池充电的项目,光伏电池输出电压18v,电流最大5A.蓄电池充电电压13.5V,电流最大10A.请问瑞萨用于电池充电器的功率MOSFETs,有没有提供这样的解决方案?谢谢! 
[答:Dennis] You can select our whole line up in Renesas web sites, or from catalog, or contact us for more information  [2004-12-15 12:01:44]
非在线问答:
[问:]  "1.用于电池充电器的功率MOSFETs与一般产品比有哪些特殊要求? 2.如何根据充电器负载要求选择MOSFETs型号?"
[答:]  no any difference. Generally selecting low Rds(on). Selecting double output current value for the mosfet, e.g. output = 1A, mosfet Id = 2A
[问:]  "do you have such a mosfet with Vds=200v Id=5mA ?"
[答:]  no
[问:] How can I get a reliable MOSFET model of Renesas? Thank you.
[答:]  refer to our product lineup or contact us by e-mail
[问:]  N沟道有LFPAK封装吗?VDS最大为多少?
[答:]  most of LFPAK are in n-ch type. Max Vds value in spec is 100V
[问:]  充电电流过大,对电池有什么影响?
[答:]  will destroy the battery
[问:]  功率MOSFET和双极晶体管在可靠性和性能上有何优点?
[答:]  mosfet: voltage-drive and can be very high current; bipolar: current drive
[问:]  恒压充电和恒流充电对MOSFET有何不同的要求?如何选用MOSFET?
[答:]  no specifically difference
[问:]  请比较MOSFET的几种封装的频率特性和热特性以及封装成本.能否用数据来说明?
[答:]  Pls see it inside our presentation
[问:]  请问HA2168的栅极电阻可低到多少?
[答:]  0.55 ohm (typ)
[问:]  是不是LFPAK封装制约了它的工作电压范围?!
[答:]  Yes. Max Vds spec voltage of LFPAK is 100V
[问:]  所用的功率器件与其它公司的器件所何特点?
[答:]  Renesas mosfet: very low Rds(on); low Qgd/Qg; low thermal resistance
[问:]  为了安全可靠,功率MOSFET的应用参数与额定参数应有多大的富余量?
[答:]  current/voltage parameters should be below 80% of the rated value
[问:]  我想问下瑞萨公司有没有耐高压的器件?
[答:]  Yes. 800V, 900V, 1000V, 1500V or so on …, pls check our product lineup
[问:]  在充电器中如何选择MOSFET?
[答:]  low Rds(9on)
[问:]  在哪方面性能最突出?!
[答:]  Rds(on), Qgd/Qg and thermal resistance
[问:]  在散热方面表现怎样?
[答:]  very good in LFPAK, WPAK packages
[问:]  在设计开关电源时,需考虑耐压和电流之外,请问还需要考虑那些呢?
[答:]  Rds(on), Qgd/Qg and thermal resistance
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