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| 主题:瑞萨用于电池充电器的功率MOSFETs | ||
| 在线问答: | ||
| [问：jams2607] | 请问作电池的充电器是主要要注意哪些方面 以及，充电时使恒压好还是恒流好 谢谢 | |
| [答：Wonky] | Depend on your IC application | [2004-12-15 10:29:19] |
| [问：gy.zy] | 瑞萨的MOSFET最大功率多大?能否用单片机I/O(如MOTOROLA的HC08、PIC单片机)直接驱动？ | |
| [答：Dennis] | Power range is wide. Can be controlled driver or directly by MCU. | [2004-12-15 10:31:55] |
| [问：chenco511] | Renesas 有75V,75A用在ebike上的MOSFET吗 | |
| [答：Wonky] | Yes ,we have TO-220AB package for this application | [2004-12-15 10:33:01] |
| [问：panjianghong] | 请问：在同步整流中，同步整流MOSFET的寄生二极管导通时间与MOSFET开通时间怎么确定？ | |
| [答：Wonky] | Current through body diode at the begining, later through MOSFET. | [2004-12-15 10:35:42] |
| [问：jacey] | 如何选用PDA与手机中的充电MOSFETS? | |
| [答：Dennis] | PDA is comparatively lower than mobile phone in charger power. Mosfets should be a SMD type and small current(less than 1A), for both appliactions | [2004-12-15 10:37:13] |
| [问：szhedong] | 目前瑞萨用在电源管理的mosfet的开关速度是多少？ | |
| [答：Wonky] | very quickly as very lower Qgd | [2004-12-15 10:38:31] |
| [问：lotusyan] | 请问瑞萨的充电器与linear的充电器比，有什么不同和特点 | |
| [答：Jacky] | We"re a semiconductors company. | [2004-12-15 10:39:02] |
| [问：zhengzhongjian] | 请问：器件的瞬间最大功率是多少？正常工作温度最高时多少？ | |
| [答：Dennis] | Max instant power is depending on which mosfet. Normally max opr temp is 125 deg C | [2004-12-15 10:40:22] |
| [问：adam79416] | 在集成功率MOSFET时一般采取何种结构的管子？大部分文献资料均采用了PMOSFET作为功率管，能否用NMOSFET作为功率管呢?在输出电流较大时,NMOSFET显然更有优势,那为什么绝大部分的电源管理芯片却采用PMOSFET作为功率管?除了考虑击穿和输出电流外还应该考虑哪些因素？ | |
| [答：Wonky] | use PMOSFET or NMOSFET depend on your IC application. | [2004-12-15 10:41:41] |
| [问：virginliu0915] | 请问瑞萨用于电池充电器的功率MOSFETs的优势在哪里？！ | |
| [答：Dennis] | super low Rds(on), low Qg & Qgd, low thermal resistance, various spec range for selection, and also the competitive price in market | [2004-12-15 10:42:47] |
| [问：zjcxzj] | D8-L系列是否有耐压不高的问题？ | |
| [答：Wonky] | No problem within our Spec."s application | [2004-12-15 10:43:39] |
| [问：ecnan jing_EBY7E] | 在快速充电是，功率器件的散热问题，直接影响产品的可靠性。请问瑞萨的场效应管的温升情况如何？ | |
| [答：Dennis] | Our new generation package types, LFPAK or WPAK, can solve this problem. For example, LFPAK thermal resistance of LFPAK is 3 deg C, as comparing to that of the traditional SOP8 50 degC. | [2004-12-15 10:45:24] |
| [问：meteor_chu] | 用在适配器或充电器中的MOSFET是否都需要带隔离变压器的?不用变压器的行吗? | |
| [答：Wonky] | Depend on your IC & safety consideration. | [2004-12-15 10:45:35] |
| [问：yangb_jl] | 请问：器件的工作频率多高？ | |
| [答：Wonky] | No problem for 1M application. | [2004-12-15 10:48:07] |
| [问：meteor_chu] | 目前Renesas的MOSFET的导通电阻能做到最低的是多少? | |
| [答：Dennis] | 2.1 mohms at 10V Vgs | [2004-12-15 10:49:43] |
| [问：riello] | Renesas的MOSFET,那些器件适合正激或反激使用?或两者都适合? | |
| [答：Dennis] | suitable for both type designs | [2004-12-15 10:52:30] |
| [问：richard_h] | 演讲中只提到低功率产品的运用，有没有用在高功率产品上？比如：SPS POWER 500W，960W？ | |
| [答：Jacky] | Renesas do have high-power MOSFETs...you can go to our website for more info: www.renesas.com. | [2004-12-15 10:53:38] |
| [问：netflu] | 瑞萨的MOSFET提供spice模型吗？在哪儿可以找到？ | |
| [答：Dennis] | Yes, Renesas have such models. You can get it from Renesas websites or request us directly by e-mail | [2004-12-15 10:54:57] |
| [问：maeleton1] | 在电池充电器中,好像大多使用P-MOSFET,N-MOSFET和P-MOSFET有何不同的属性? | |
| [答：Wonky] | They are different construction. | [2004-12-15 10:55:04] |
| [问：richard ben] | 请问renesas用于手机充电器的mosfet RJK6022有没有配套的driver ic | |
| [答：Jacky] | Not requested specified 配套 driver IC. You can choose devices based on the circuit design. | [2004-12-15 10:55:42] |
| [问：maeleton1] | DC/DC转换中,导致MOSFET的损耗有那几部分?那种损耗是主要的? | |
| [答：Dennis] | conduction loss and switching loss. switching loss is the main one | [2004-12-15 10:57:17] |
| [问：rocky1] | 请问你们是怎样考虑电池内阻对效率和寿命等因素的影响? | |
| [答：Wonky] | The lower Rds,the better for efficiency & the temperature will more lower. | [2004-12-15 10:59:33] |
| [问：jeffrey_hz] | MOSFET的泄漏电流有多少？ | |
| [答：Wonky] | Our MOSFET"s performance is very good, no need worry about the leak current. | [2004-12-15 11:01:14] |
| [问：riello] | 高边和低边MOSFET除了电压不同外,还要注意什么问题?如何选择? | |
| [答：Wonky] | High side need more lower switching loss & low side need more lower Rdson. | [2004-12-15 11:03:32] |
| [问：astroares] | 请问1A的DC/DC应该选用什么型号的Renesas的MOSFET | |
| [答：Dennis] | usually using 2A mosfet. For which mosfet, pls check our mosfet line up in the presentation or catalog. | [2004-12-15 11:03:45] |
| [问：zzkeng] | 用在适配器或充电器中的MOSFET是否都需要带隔离变压器的?不用变压器的行吗? | |
| [答：Wonky] | If you need transformer depend on your IC& safety consideration,no problem for MOSFET. | [2004-12-15 11:06:26] |
| [问：kllyj2008] | 如何降低开关电源中所产生的尖峰电压对MOSFET的损坏? | |
| [答：Dennis] | reducing it by control IC or other components | [2004-12-15 11:07:15] |
| [问：DirectCG] | DC/DC转换器中所用的MOSFET和锂离子充电器所用的MOSFET有何差别? | |
| [答：Wonky] | They are same,just depend on your application while select them. | [2004-12-15 11:08:22] |
| [问：Jasonzhou168] | 同步整流MOSFET将会被应用到台式电脑上吗？ | |
| [答：Dennis] | yes. already used in desktop PC! | [2004-12-15 11:09:48] |
| [问：mountds] | 我想用MOSFET 制作一个分压器用于显示器的亮度控制，其VDS=DC200V , Id max＝5mA , 瑞萨的MOSFET 哪个型号可选？ | |
| [答：Wonky] | which package do you need? | [2004-12-15 11:11:23] |
| [问：dudu001] | 请问： 用于笔记本的P-Channel电池和N-Channel电池的功率有多大？这两款外部性能有什么区别？ 谢谢！ | |
| [答：Dennis] | charger poewer of about 150W to 200W. no difference in package outline. Note: Commonly-use package of SOP8, or by Renesas LFPAK or WPAK for more high efficiency / end models | [2004-12-15 11:15:09] |
| [问：ecnan jing_EBY7E] | Trr,Ciss,Qg是影响管子开关速度的重要参数，请问瑞萨的器件有何优势？ | |
| [答：Dennis] | In new Renesas mosfet Qg is very low, and Ciss is also reasonable low as well | [2004-12-15 11:17:27] |
| [问：riello] | Renesas的功率MOSFET的封装有那几种?从性能和成本上说,那种最佳? | |
| [答：Jacky] | There"re LFPAK, WPAK, SO-8, TO-220, etc.. For charger applications, we promote LFPAK (such as HAT2167H, HAT2168H) for high-performance, and promote SO-8 (such as HAT2195R, HAT2198R) for cost-competitive design. In addition, RJK6022DJE (package is TO-92M) for mobile phone charger. | [2004-12-15 11:17:31] |
| [问：zxp1963] | 1、瑞萨用于电池充电器的功率MOSFETs的功率与输入电压关系，对于220V交流输入电压，最大输出功率是多少？ 2、在互联网上能否找到中文开发资料？ | |
| [答：Wonky] | Depend on your detail circuit & application. For chinese version material,pls contact our office. | [2004-12-15 11:17:51] |
| [问：mountds] | I NEED A MOSFET WHICH VGS IS 0~5V , VDS IS ABOUT 200VDC Id LESS THAN 5mA , COULD YOU PLS ADVISE WHICH TYPE COULD MEET MY REQUIREMENT ? THKS | |
| [答：Wonky] | which package do you need? | [2004-12-15 11:19:16] |
| [问：chenco511] | Renesas 是否可以提供 M37512+M61048的DEMO BOARD | |
| [答：Dennis] | Probably O.K. Pls contact our sales office for more details | [2004-12-15 11:21:01] |
| [问：encaon] | MOSFET的漏极电流Id和最大充电电流间应有多大的富余量? | |
| [答：Wonky] | Depend on your application,for example,heatsink. | [2004-12-15 11:21:08] |
| [问：dreamb] | 请问你们有没有SO8的改进版的MOSFET比如Philips的LFPAK | |
| [答：Jacky] | We have LFPAK, WPAK which are advancing SO8. | [2004-12-15 11:21:40] |
| [问：chenco511] | 对于Li电池电动车,RENESAS对于充电电路方面有适合的产品吗 | |
| [答：Dennis] | Yes. Renesas have products for such use. Pls contact our engineer for more information | [2004-12-15 11:22:33] |
| [问：maeleton1] | Renesas的MOSFET的EMI性能和噪音特性如何?抗干扰能力如何?是否要作特别处理? | |
| [答：Wonky] | Our MOSFET"s performance is very good, Don"t worry about them. | [2004-12-15 11:22:37] |
| [问：zyn37] | 瑞萨用于电池充电器的功率MOSFETs 请介绍主要型号，制造特点、可靠性抗烧毁情况。谢谢！ | |
| [答：Dennis] | pls specify which kind of battery charger? for what use? | [2004-12-15 11:23:25] |
| [问：ecnan jing_EBY7E] | 请问镍氢电池和锂电池充电用的MOSTEF有何区别？ | |
| [答：Dennis] | no any difference | [2004-12-15 11:24:18] |
| [问：chunsen] | 使用中MOSFET容易烧毁，最重要的要注意什么？ | |
| [答：Wonky] | Within MOSFET"s Spec.while application. | [2004-12-15 11:24:30] |
| [问：zzkeng] | 目前Renesas的MOSFET的导通电阻能做到最低的是多少? | |
| [答：Dennis] | 2.1 mohms at 10V Vgs | [2004-12-15 11:27:57] |
| [问：virginliu0915] | P沟道LFPAK封装VDS范围最大是多少？ | |
| [答：Wonky] | Now LFPAK PMOSFET Vds is 30V. | [2004-12-15 11:27:57] |
| [问：meteor_chu] | Renesas的MOSFET有没有带温度传感器的? | |
| [答：Wonky] | Some special MOSFET have. | [2004-12-15 11:29:23] |
| [问：David Lee] | most of Li battery use Vgss=+/-20v Pch MOS , but Renesas"s PCH Vgss =-20v/+10v Is it OK for Li battery design? | |
| [答：Dennis] | Absolutely O.K. | [2004-12-15 11:30:06] |
| [问：yingkelly] | 我想问下瑞萨公司有没有耐高压的器件？ | |
| [答：Wonky] | Yes,Max Vdss is 1500v. | [2004-12-15 11:30:47] |
| [问：wwmwl] | 功率MOSFETs性能主要在于MOSFETs的结构，TO-92M MOSFETs是否在结构上有所突破？如果有，可不可以介绍一下？ 谢谢！ | |
| [答：Dennis] | Yes. Renesas have such technology. By chip mofification. | [2004-12-15 11:32:24] |
| [问：ecnan jing_EBY7E] | 用IR2110配MOSFET作电机控制（直流12V/300W），选用瑞萨的什么型号最好？ | |
| [答：Wonky] | You can select TO-3P package series for high current application. | [2004-12-15 11:33:14] |
| [问：corea] | what"s the structure of the device, VMOS or LDMOS, or .....new? | |
| [答：Dennis] | Renesas does not have these kind of mosfets. For more detailed information, pls consult the related suppliers. | [2004-12-15 11:40:20] |
| [问：luogongqiang] | Renesas的MOSFET在充电器中的效率能达到多高?它的损耗有多高? | |
| [答：Wonky] | Very high efficiency as very lower Rdson , Qgd, ...etc. | [2004-12-15 11:40:25] |
| [问：luogongqiang] | 能否详细介绍Renesas的MOSFET的热特性和保护性能?不加散热器的最大耗散功能目前能达到多高? | |
| [答：Wonky] | Our LFPAK & WPAK have very lower thermal resistance. | [2004-12-15 11:42:54] |
| [问：xianxiazai] | 你们提供设计方案？芯片供货周期多长？ | |
| [答：Jacky] | Depands....Normally leadtime is around 6-12 weeks; but under shortage, leadtime might be longer. | [2004-12-15 11:43:44] |
| [问：encaon] | DC/DC转换器中所用的MOSFET和锂离子充电器所用的MOSFET有何差别? | |
| [答：Wonky] | They are same,just depend on your application while select them. | [2004-12-15 11:44:06] |
| [问：meteor_chu] | Renesas的MOSFET是否有带PWM控制器的? | |
| [答：Dennis] | Sorry we don"t have such now. In near future, RENESAS have plan to develop it | [2004-12-15 11:44:47] |
| [问：DirectCG] | 在解决提高功率的同时，又要把各种噪声压制到最小。贵公司有什么好的可操作的方法？ | |
| [答：Wonky] | Use good performance MOSFET,such as LFPAK, It can work in high frequency ,however very low noise. | [2004-12-15 11:46:12] |
| [问：virginliu0915] | 请问LFPAK封装比SOP-8封装便宜吗？ | |
| [答：Jacky] | No. LFPAK is expensive than SO-8. | [2004-12-15 11:47:48] |
| [问：zhngjnpng911] | 要增加输出功率,能否把MOSFET并联使用?如何选择这两种MOSFET?驱动时有何要注意的地方? | |
| [答：Wonky] | Yes,of course. | [2004-12-15 11:48:00] |
| [问：wrilcb] | 如何选用NOTBOOK中充电MOSFETS？ | |
| [答：Dennis] | LFPAK, WPAK or SOP8 package; 20V / 30V; 10A to 20A (usually using p-ch mosfets) | [2004-12-15 11:48:45] |
| [问：mountds] | I need a MOSFET VGS=0~5V Vdss=DC200~ Id=0~5mA , small package such so-8 sot23 ,to-92 are acceptable ,pls advise which one ? | |
| [答：Wonky] | Depend on your circuit design. | [2004-12-15 11:49:29] |
| [问：luo gongqiang] | Renesas的MOSFET的工作频率能达到多高? | |
| [答：Wonky] | No problem for 1M frequency application. | [2004-12-15 11:50:06] |
| [主持人：ChinaECNet] | 恭喜您，深圳市华强北群星广场A座2301的jvirginliu0915经过电脑抽奖您在本次座谈中获得一部MP3播放器。请网名为virginliu0915的用户与中电网联系(8610-82888222-7009 或 lilin@chinaecnet.com)。 | [2004-12-15 11:50:48] |
| [问：yingkelly] | 请问瑞萨公司的功率MOSFET最高耐压有多大？ | |
| [答：Wonky] | Max Vdss is 1500v. | [2004-12-15 11:50:50] |
| [问：smallwind] | 目前低压大电流功率MOSFET采用TRENCH MOSFET的方式多不多？TRENCH MOSFET设计制造需要注意哪几点？ | |
| [答：Dennis] | Nowaday ususlly adopts the trench mosfets. No difference in circuit designing. | [2004-12-15 11:51:12] |
| [问：xuezg] | 贵公司产品与fairchildsemi同类产品相比有何优点与缺点？ | |
| [答：Dennis] | Renesas stronger and higher performance, in terms of Rds(on), Qg /Qgd, thermal res, package compatibility and types , and new wide range product line up | [2004-12-15 11:53:46] |
| [问：ecnanjing_EBY7E] | 同样功率输出时，MOSFET与双极晶体管比较各有何特点？ | |
| [答：Wonky] | Basically,MOSFET is more suitable for switching power supply. | [2004-12-15 11:56:26] |
| [问：forwardyu] | 1，是哪一种封装？ 2，如何计算温升，计算出的值与实际值相比，一般会有多大偏差。 3，如何根据规格书的Id选定所需的管子，Id derating 一般是怎样？ 4，renesas的MOSFET相比竞争对手的Rdson 和Qin Qrr等有何优势？或者说renesas MOSFET的优势是怎样体现出来的？ | |
| [答：Dennis] | 1. which mosfet 2. no much discrepancy 3. Id down as temp rising 4. Renesas higher Rds(on) and lower Qg/Qgd. Higher efficiency can be realised | [2004-12-15 12:00:17] |
| [问：rainstar04] | 我在做一个太阳能电池板给蓄电池充电的项目,光伏电池输出电压18v,电流最大5A.蓄电池充电电压13.5V,电流最大10A.请问瑞萨用于电池充电器的功率MOSFETs,有没有提供这样的解决方案?谢谢! | |
| [答：Dennis] | You can select our whole line up in Renesas web sites, or from catalog, or contact us for more information | [2004-12-15 12:01:44] |
| 非在线问答: | ||
| [问：] | "1.用于电池充电器的功率MOSFETs与一般产品比有哪些特殊要求？ 2.如何根据充电器负载要求选择MOSFETs型号？" | |
| [答：] | no any difference. Generally selecting low Rds(on). Selecting double output current value for the mosfet, e.g. output = 1A, mosfet Id = 2A | |
| [问：] | "do you have such a mosfet with Vds=200v Id=5mA ?" | |
| [答：] | no | |
| [问：] | How can I get a reliable MOSFET model of Renesas? Thank you. | |
| [答：] | refer to our product lineup or contact us by e-mail | |
| [问：] | N沟道有LFPAK封装吗？VDS最大为多少？ | |
| [答：] | most of LFPAK are in n-ch type. Max Vds value in spec is 100V | |
| [问：] | 充电电流过大,对电池有什么影响? | |
| [答：] | will destroy the battery | |
| [问：] | 功率MOSFET和双极晶体管在可靠性和性能上有何优点? | |
| [答：] | mosfet: voltage-drive and can be very high current; bipolar: current drive | |
| [问：] | 恒压充电和恒流充电对MOSFET有何不同的要求?如何选用MOSFET? | |
| [答：] | no specifically difference | |
| [问：] | 请比较MOSFET的几种封装的频率特性和热特性以及封装成本.能否用数据来说明? | |
| [答：] | Pls see it inside our presentation | |
| [问：] | 请问HA2168的栅极电阻可低到多少？ | |
| [答：] | 0.55 ohm (typ) | |
| [问：] | 是不是LFPAK封装制约了它的工作电压范围？！ | |
| [答：] | Yes. Max Vds spec voltage of LFPAK is 100V | |
| [问：] | 所用的功率器件与其它公司的器件所何特点? | |
| [答：] | Renesas mosfet: very low Rds(on); low Qgd/Qg; low thermal resistance | |
| [问：] | 为了安全可靠,功率MOSFET的应用参数与额定参数应有多大的富余量? | |
| [答：] | current/voltage parameters should be below 80% of the rated value | |
| [问：] | 我想问下瑞萨公司有没有耐高压的器件？ | |
| [答：] | Yes. 800V, 900V, 1000V, 1500V or so on …, pls check our product lineup | |
| [问：] | 在充电器中如何选择MOSFET? | |
| [答：] | low Rds(9on) | |
| [问：] | 在哪方面性能最突出？！ | |
| [答：] | Rds(on), Qgd/Qg and thermal resistance | |
| [问：] | 在散热方面表现怎样？ | |
| [答：] | very good in LFPAK, WPAK packages | |
| [问：] | 在设计开关电源时，需考虑耐压和电流之外，请问还需要考虑那些呢？ | |
| [答：] | Rds(on), Qgd/Qg and thermal resistance | |
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